Journal
COATINGS
Volume 13, Issue 9, Pages -Publisher
MDPI
DOI: 10.3390/coatings13091550
Keywords
reactive sputtering; gallium oxide; thin film; liquid gallium
Ask authors/readers for more resources
In this study, gallium oxide thin films were deposited via radio frequency sputtering and it was found that adjusting the DC target potential can improve the film quality and increase the oxygen content.
Ga2O3 is a promising material in the optoelectronics and semiconductor industry. In this work, gallium oxide thin films were deposited via radio frequency (RF) sputtering, using a liquid Ga target. The reactive sputtering was carried out using different oxygen flow rates and DC target potentials induced via the RF power. The thickness of the samples varied between 160 nm and 460 nm, depending on the preparation conditions. The composition and the refractive index of the layers were investigated via energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. It was found that, through the use of a lower DC target potential, a better film quality and higher oxygen content can be achieved. The reactive sputtering was modeled based on the Berg model, with the aim of determining the sputtering yields and the sticking coefficient. It was shown that an increase in DC target potential leads to the preferential sputtering of gallium.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available