Synthesis and Characterization of a Zirconium (Zr) Thin Film on Si(100) via Pulsed Laser Deposition

Zirconium (Zr) thin films were deposited on silicon using pulsed laser deposition (PLD) with two laser wavelengths (1064 nm and 532 nm) and varying substrate temperatures (25 degrees C, 300 degrees C, and 500 degrees C) and laser fluences (0.25, 0.5, 1.0 J/cm2). Results indicate that smoother films were obtained with 1064 nm and surface roughness increased with higher fluences. Optimal crystalline films were obtained at 300 degrees C. XRD, SEM, and AFM analysis revealed distinct patterns and peaks related to laser parameters. The growth mechanisms of a Zr film were computed based on a well-known continuum model of thin film growth. Our simulations agree with experimental observations. The study highlights crucial factors affecting Zr thin film deposition and provides insights for optimizing PLD parameters to achieve high-quality films.

Automated summary

This study investigated the deposition of Zirconium (Zr) thin films on silicon substrates using pulsed laser deposition (PLD). The experiments were performed with two different laser wavelengths (1064 nm and 532 nm), varying substrate temperatures (25 degrees C, 300 degrees C, and 500 degrees C), and laser fluences (0.25, 0.5, 1.0 J/cm2). Results showed that smoother films were obtained with the 1064 nm laser wavelength, and surface roughness increased with higher laser fluences. The optimal crystalline films were obtained at a substrate temperature of 300 degrees C. XRD, SEM, and AFM analysis provided patterns and peaks related to the laser parameters. Computational simulations based on a continuum model of thin film growth agreed with experimental observations. This study emphasizes the crucial factors affecting Zr thin film deposition and provides insights for optimizing PLD parameters to achieve high-quality films.