Journal
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
Volume 26, Issue -, Pages 7483-7489Publisher
ELSEVIER
DOI: 10.1016/j.jmrt.2023.08.230
Keywords
Dilute magnetic semiconductor; Mn-doped ZnO; RKKY exchange interaction; Carrier density
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In this paper, the RKKY indirect exchange interactions in a two-dimensional model of Zn1-xMnxO dilute magnetic semiconductor are theoretically studied. The exchange coupling constants for different doped samples are calculated, and the variations in magnetic coupling strength with carrier density are examined.
In this paper, we have theoretically studied the RKKY indirect exchange interactions in a two-dimensional model of Zn1-xMnxO dilute magnetic semiconductor. Under the RKKY interaction framework, we have calculated the exchange coupling constants for four different doped samples of host ZnO, which are 5%, 10%, 15%, and 20%. The carrier density for the respective configurations is taken as 0.1, 0.5, 0.75, and 1 hole per dopant, considering long-range interactions controlled by the cutoff scale in the RKKY range function. The variation of magnetic coupling strength with the carrier density is also examined, and the overall magnetic behavior of the proposed 2-D system is estimated. (c) 2023 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
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