Tuning the metal-semiconductor contact nature in MXene-based van der Waals heterostructures

Two-dimensional (2D) transition metal carbides, nitrides, or carbonitrides (MXenes) have emerged as promising ultrathin materials for nanoelectronics and optoelectronics. However, the contact barrier at metal --semiconductor (MS) junctions still significantly limits the device's performance. Here, we propose a novel strategy-functionalizing accompanied with external electric fields-to tune the MS contact nature in MXene-based van der Waals (vdW) heterostructures, taking 2D Ti2C as an example, by means of first-principles calcu-lations. Different Ti2CO2/Ti2CX2 (X = OH or S) vdW heterostructures are designed via functionalizing Ti2C metals to contact with 2D Ti2CO2. We reveal that OH functionalized vdW MS heterostructure (Ti2CO2/Ti2C (OH)2) can be tuned to the Ohmic contact owing to the strong interlayer interaction inducing a large number of interlayer transferred electrons; while for the sulfurized vdW MS heterostructure (Ti2CO2/Ti2CS2), its Schottky barrier height and contact type can be effectively tuned by external electric field due to the rather weak inter -layer interaction. Our work paves a new way for the construction of 2D MXene-based vdW MS heterostructures and demonstrates the great potential of 2D MXenes in future nanoelectronics and optoelectronics.

Automated summary

This article proposes a novel strategy of functionalization and external electric fields to tune the metal-semiconductor contact nature in MXene-based vdW heterostructures. It reveals the potential of MXenes in future nanoelectronics and optoelectronics.