Ga2O3/Ag/Ga2O3-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes

Ga2O3/Ag/Ga2O3-laminated films with high electrical conductivity and ultraviolet (UV) transparency were achieved by radio frequency magnetron sputtering at room temperature (RT) on quartz glass. The influence of annealing temperature and ambient on the structural, electrical and optical properties of Ga2O3/Ag/Ga2O3-laminated films were investigated in detail. As the annealing temperature increases, the optical bandgap of the Ga2O3-laminated films widens. The Ga2O3/Ag/Ga2O3-laminated films exhibited good photoelectric performance with a figure-of-merit (FOM) value of 5.83 x 10(-3) Omega(-1), a sheet resistance of 12.55 Omega/sq, a transmittance of 95.15% at 325 nm, and an average transmittance of 77.56% (250 similar to 300 nm). All these results suggest that RT-fabricated Ga2O3/Ag/Ga2O3-laminated films show great potential in UV transparent conductive electrodes for UV optoelectronic devices and in flexible electronics.

Automated summary

Ga2O3/Ag/Ga2O3-laminated films with high electrical conductivity and UV transparency were successfully fabricated at room temperature on quartz glass by radio frequency magnetron sputtering. The effects of annealing temperature and ambient on the structure, electrical, and optical properties of the films were investigated. The films exhibited good photoelectric performance with a high figure-of-merit value, low sheet resistance, and high transmittance in the UV range, indicating their potential in UV optoelectronic devices and flexible electronics.