Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties

In this paper, for the first time, we report a strong effect of the arsenic pressure used for the high-rate GaAs capping of self-assembled InAs quantum dots on their optical properties. A 140 nm red shift of the photoluminescence peak position is observed when the overgrowth arsenic pressure increases threefold. We explain this behavior in terms of different intensities of quantum dot decomposition, which occurs during the overgrowth under different conditions. When the arsenic pressure is sufficiently high, a GaAs capping layer is formed by deposited species with a low impact on initial quantum dots. At a low arsenic pressure, arsenic deficiency leads to the intensive intermixing caused both by the enhanced Ga/In atom exchange and by the consumption of arsenic atoms belonging to quantum dots for the GaAs capping layer formation. As a result of the overgrowth, quantum dots are divided into families with a large (high pressure) and a small (low pressure) average size, yielding long-wave (1.23 & mu;m) and short-wave (1.09 & mu;m) photoluminescence peaks, respectively. Thus, a significant influence of the overgrowth arsenic pressure on the characteristics of InAs quantum dots is evidenced in this study.

Automated summary

In this study, we demonstrate the significant influence of arsenic pressure used for high-rate GaAs capping on the optical properties of self-assembled InAs quantum dots. An increase in overgrowth arsenic pressure leads to a red shift in the photoluminescence peak position, which can be explained by the different intensities of quantum dot decomposition. High arsenic pressure results in a GaAs capping layer that has a low impact on the initial quantum dots, while low arsenic pressure leads to intensive intermixing. This study provides evidence for the strong effect of overgrowth arsenic pressure on the characteristics of InAs quantum dots.