Journal
NANOTECHNOLOGY
Volume 27, Issue 48, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/48/48LT03
Keywords
graphene; heterostructure; ultraviolet photodetector
Funding
- National Natural Science Foundation of China [51202216, 51502264, 21522508]
- Special Foundation of Young Professor of Zhejiang University [2013QNA5007]
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A ZnO quantum dot. photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 AW(-1) and detectivity of more than 1.02 x 10(13) Jones (Jones = cm Hz(1/2) W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 AW(-1) to 1915 AW(-1) and the detectivity is improved from 5.8 x 10(12) to 1.0 x 10(13) Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.
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