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Chemistry, Multidisciplinary
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Mingyue Shao et al.
Summary: Phase change memory (PCM), a new storage technology, has advantages in capacity and endurance. This research focuses on improving the thermal stability and switching speed performance of phase change materials. Ta-doped Sb3Te1 alloy demonstrates better thermal stability and faster crystallization rates, making it a promising material for PCM applications.
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Chemistry, Multidisciplinary
Cheng Liu et al.
Summary: This study found that the first resistance dropping in the GST film is related to the increase of carrier concentration, and the atomic bonding environment changes significantly during the crystallization process. The second resistance dropping is related to the increase of carrier mobility. Additionally, during the cubic to the hexagonal phase transition, the nanograins grow significantly, reducing the carrier scattering effect. This study lays the foundation for precise control of the storage states of GST-based PCRAM devices.
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Summary: Artificial neural networks have become a game-changer in breaking the bottleneck of traditional von Neumann architectures, and memristive devices, as a unit of artificial neural networks, play a crucial role due to their similarity to biological synapses. In this study, the controllable memory window of an HfO2/TiOx memristive device is achieved by adjusting the thickness ratio of the sublayer. The nanocrystalline HfO2/TiOx memristor shows improved uniformity and stable biological functions, making it highly suitable for neuromorphic computing in brain-inspired intelligent systems.
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Tong Chen et al.
Summary: With the advent of the big data and artificial intelligence era, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways find significant applications in neuromorphic computing, akin to tunable weight of biological synapses. However, detecting the components of conductive tunable nanopathways in a-SiNx:H RRAM has been a challenge due to down-scaling thickness to the nanoscale during resistive switching. In this study, we show for the first time that the evolution of a Si dangling bond nanopathway in a-SiNx:H resistive switching memory can be tracked by transient current at different resistance states.
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Xiaolin Sun et al.
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Zhimin Yu et al.
Summary: Y-0.9(GdxBi1-x)(0.1)BO3 phosphors were synthesized at high temperature, and their differentiated phases and micro-morphologies were determined. Strong photon emissions were observed under both ultraviolet and visible radiation, confirming the effectiveness of energy transfer from Bi3+ to Gd3+ ions. The optimal emission was obtained from Y0.9Gd0.08Bi0.02BO3 phosphor annealed at 800 degrees C, with maximum quantum yields (QYs) of 24.75% and 1.33% under 273 nm and 532 nm excitations, respectively. These UVB luminescent phosphors based on co-doped YBO3 orthoborates have potential applications in skin treatment.
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Chemistry, Multidisciplinary
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Summary: In this study, the carrier injection efficiency of 3D NAND flash memory based on a nanocrystalline silicon floating gate is reported. It is found that the control layer thickness of the nanocrystalline silicon floating gate can influence the direction of the C-V hysteresis curve. Thicker control layers enhance carrier injection efficiency, while thinner control layers lead to carrier injection from the top electrode into the defect state of the SiNx control layer.
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Renjie Wu et al.
Summary: The influence of Si concentration on the electrical properties of Si-Te OTS materials was studied in this paper. It was found that the threshold voltage and leakage current remained basically unchanged with the decrease in electrode diameter, while the on-current density (J(on)) increased significantly as the device scaled down, with 25 MA/cm(2) on-current density achieved in the 60-nm SiTe device. Additionally, the state of the Si-Te OTS layer was determined and the approximate band structure was obtained, which suggested that the conduction mechanism conformed to the Poole-Frenkel (PF) model.
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Teng Sun et al.
Summary: In order to develop high-performance Si-based light-emitting devices, Si nanocrystals/SiC multilayers doped with P are fabricated, which greatly enhance the device performance. Both undoped and P-doped LEDs based on Si nanocrystals/SiC multilayers are successfully fabricated, and the performance is greatly improved after doping, attributing to the recombination of electron-hole pairs in Si nanocrystals.
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Summary: This paper presents a simple and scalable porous piezoresistive/capacitive dual-mode sensor with a porous structure in polydimethylsiloxane (PDMS) and with multi-walled carbon nanotubes (MWCNTs) embedded on its internal surface to form a three-dimensional spherical-shell-structured conductive network. The sensor offers a dual piezoresistive/capacitive strain-sensing capability, a wide pressure response range, a very large linear response region, excellent response stability and durability. It can be used for human motion detection, gesture and sign language recognition, as well as speech recognition by monitoring facial muscle activity.
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Chemistry, Multidisciplinary
Shu Ying et al.
Summary: This paper proposes a novel approach to fabricate a high-performance flexible capacitive pressure sensor using self-assembled technology. The sensor features a microsphere-array gold electrode and a nanofiber nonwoven dielectric material. The sensor demonstrates high sensitivity through the deformation of the microsphere structures of the gold electrode when subjected to pressure, leading to an increase in the relative area between the electrodes and a corresponding change in the thickness of the medium layer.
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Yang Yang et al.
Summary: Amorphous Al2O3-Y2O3:Er nanolaminate films are prepared on silicon using atomic layer deposition, and the resulting metal-oxide-semiconductor light-emitting devices exhibit similar electroluminescence (EL) at 1530 nm. The addition of Y2O3 in Al2O3 reduces the electric field for Er excitation and significantly enhances the EL performance without affecting electron injection and radiative recombination of doped Er3+ ions. The 0.2 nm Y2O3 cladding layers for Er3+ ions increase the external quantum efficiency from around 3% to 8.7% and the power efficiency by nearly one order of magnitude to 0.12%. The EL is attributed to impact excitation of Er3+ ions by hot electrons, originated from Poole-Frenkel conduction mechanism within the Al2O3-Y2O3 matrix.
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Katsunori Makihara et al.
Summary: We have achieved high-density formation of super-atom-like Si quantum dots with Ge-core on ultrathin SiO2 using high-selective chemical-vapor deposition and applied them to LEDs. Luminescence measurements reveal carrier confinement and recombination properties in the Ge-core, indicating type II energy band discontinuity between the Si-clad and Ge-core. Under forward bias conditions, electroluminescence becomes observable in the near-infrared region due to radiative recombination between quantized states in the Ge-core, facilitated by a deep potential well for holes caused by simultaneous electron/hole injection from the gate and substrate. These results will lead to the development of Si-based light-emitting devices that are highly compatible with Si-ultra-large-scale integration processing, revolutionizing silicon photonics.
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Zewen Lin et al.
Summary: This study investigates the effect of a-SiCxNy:H encapsulation layers on the stability and photoluminescence of CsPbBr3 quantum dots (QDs). It is found that a high N content in the encapsulation layers leads to severe PL degradation of CsPbBr3 QDs. However, by reducing the N content, the PL degradation can be significantly minimized. The transition of the dominant phase in the encapsulation layer from SiNx to SiCxNy helps preserve the inherent PL characteristics of CsPbBr3 QDs and provides long-term stability.
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Vladimir G. G. Kuznetsov et al.
Summary: Crystalline transition-metal chalcogenides are extensively studied, while there is limited understanding of amorphous chalcogenides doped with transition metals. To fill this knowledge gap, we conducted first principle simulations to investigate the effect of transition metal doping on the typical chalcogenide glass As2S3. Our results show that doping leads to a transformation from a semiconductor to a metal, with the appearance of magnetic properties. This opens up the possibility of chalcogenide glasses doped with transition metals becoming a technologically important material.
Article
Chemistry, Multidisciplinary
Min Wang et al.
Summary: This study reports a stable rechargeable aqueous zinc-air battery using a heterogeneous two-dimensional molybdenum sulfide cathode catalyst. The catalyst shows decent oxygen evolution and acceptable oxygen reduction catalytic activity compared to commercial ones.
