Journal
NANOMATERIALS
Volume 13, Issue 20, Pages -Publisher
MDPI
DOI: 10.3390/nano13202791
Keywords
carbon nanotubes; interconnects; CVD; carbon source; catalyst; chirality control; doping; contact resistance; end-contacted
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This article focuses on the challenges and developments in the application of CVD-grown carbon nanotubes in IC interconnects. Chemical vapor deposition is the most promising method for growing carbon nanotubes that can be compatible with integrated circuit manufacturing processes.
With the continuous shrinkage of integrated circuit (IC) dimensions, traditional copper interconnect technology is gradually unable to meet the requirements for performance improvement. Carbon nanotubes have gained widespread attention and research as a potential alternative to copper, due to their excellent electrical and mechanical properties. Among various methods for producing carbon nanotubes, chemical vapor deposition (CVD) has the advantages of mild reaction conditions, low cost, and simple reaction operations, making it the most promising approach to achieve compatibility with integrated circuit manufacturing processes. Combined with through silicon via (TSV), direct application of CVD-grown carbon nanotubes in IC interconnects can be achieved. In this article, based on the above background, we focus on discussing some of the main challenges and developments in the application of CVD-grown carbon nanotubes in IC interconnects, including low-temperature CVD, metallicity enrichment, and contact resistance.
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