Journal
NANOMATERIALS
Volume 13, Issue 19, Pages -Publisher
MDPI
DOI: 10.3390/nano13192721
Keywords
spintronics; spin Hall effect; ferrimagnetic insulator; spin-orbit torque
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Studying the mechanism of the spin Hall effect in Pt/Tm3Fe5O12 heterostructures, we demonstrate the intrinsic contribution in the moderately dirty regime is responsible for the generation of this spin Hall effect, through tuning the properties of Pt and investigating the efficiency of spin-orbit torque generation.
Studying the mechanisms of the spin Hall effect (SHE) is essential for the fundamental understanding of spintronic physics. By now, despite the intensive studies of SHE on heavy metal (HM)/metallic magnet heterostructures, the SHE on HM/ferrimagnetic insulator (FMI) heterostructures still remains elusive. Here, we study the mechanism of SHE in the Pt/Tm3Fe5O12 (TmIG) heterostructure. We first tune the crystallinity and resistivity of Pt by an annealing method, and then study the spin-orbit torque (SOT) in the tuned-Pt/TmIG devices. The SOT generation efficiency per unit electric field and spin Hall angle were obtained, which are insensitive to the annealing temperature. We further demonstrate that the intrinsic contribution in the moderately dirty regime is responsible for the SHE in our Pt/TmIG bilayer. Our study provides an important piece of information for the SHE in FMI-based spintronic physics.
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