Sol-Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks

Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol-gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming process. The effect of current compliance on the Y2O3 RRAM devices was investigated, and the results revealed that the resistance values gradually decreased with increasing set current compliance values. By regulating these values, the formation of pure Ag conductive filament could be restricted. The dominant oxygen ion diffusion and migration within Y2O3 leads to the formation of oxygen vacancies and Ag metal-mixed conductive filaments between the two electrodes. The filament composition changes from pure Ag metal to Ag metal mixed with oxygen vacancies, which is crucial for realizing multilevel cell (MLC) switching. Consequently, intermediate resistance values were obtained, which were suitable for MLC switching. The fabricated Y2O3 RRAM devices could function as a MLC with a capacity of two bits in one cell, utilizing three low-resistance states and one common high-resistance state. The potential of the Y2O3 RRAM devices for neural networks was further explored through numerical simulations. Hardware neural networks based on the Y2O3 RRAM devices demonstrated effective digit image classification with a high accuracy rate of approximately 88%, comparable to the ideal software-based classification (similar to 92%). This indicates that the proposed RRAM can be utilized as a memory component in practical neuromorphic systems.

Automated summary

Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol-gel process. The devices showed conventional bipolar RRAM characteristics without the need for a high-voltage forming process. The study investigated the effect of current compliance on the devices and found that resistance values decreased as set current compliance values increased. By controlling these values, the formation of pure Ag conductive filaments could be restricted. The Y2O3 RRAM devices demonstrated potential for use in neural networks and achieved effective digit image classification.