4.7 Article

Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices

Journal

NANOMATERIALS
Volume 13, Issue 13, Pages -

Publisher

MDPI
DOI: 10.3390/nano13132002

Keywords

nanoelectronics; Josephson junctions; nanodevices; crystal structure; epitaxial films; surface roughness; tunnel junctions

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This paper develops fabrication technology and studies aluminum films for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR. Two-temperature-step quasiepitaxial growth of Al on (111) Si substrate provides a preferentially (111)-oriented Al polycrystalline film and improves film quality by reducing structural defects and surface imperfections. This technique has the potential to enhance superconducting current density, stray capacitance, relaxation time, and reduce noise.
In this paper, we develop fabrication technology and study aluminum films intended for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR. Two-temperature-step quasiepitaxial growth of Al on (111) Si substrate provides a preferentially (111)-oriented Al polycrystalline film and reduces outgrowth bumps, peak-to-peak roughness from 70 to 10 nm, and texture coefficient from 3.5 to 1.7, while increasing hardness from 5.4 to 16 GPa. Future progress in superconducting current density, stray capacitance, relaxation time, and noise requires a reduction in structural defect density and surface imperfections, which can be achieved by improving film quality using such quasiepitaxial growth techniques.

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