Journal
NANOTECHNOLOGY
Volume 27, Issue 22, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/22/225201
Keywords
transition metal dichalcogenides; MoS2; doping; field-effect transistor
Funding
- National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2013R1A2A2A01069023, 2014K2A2A4001415, 2015H1D3A1062519]
- National Research Foundation of Korea [2015H1D3A1062519] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS2)-based field-effect transistor (FET). The threshold voltage of the MoS2 FET shifted towards more negative values (from -20 to -70 V) on treating with 100% hydrazine solution with the channel current increasing from 0.5 to 25 mu A at zero gate bias. The inverse subthreshold slope decreased sharply on doping, while the ON/OFF ratio increased by a factor of 100. Gate-channel coupling improved with doping, which facilitates the reduction of channel length between the source and drain electrodes without compromising on the transistor performance, making the MoS2-based FET easily scalable.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
