Journal
NANOTECHNOLOGY
Volume 27, Issue 38, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/38/385703
Keywords
self-catalyzed GaAsSb nanowires; low frequency noise; Hooges noise parameter; interface trap density; photodetector; noise equivalent power
Funding
- Research Council of Norway (FRINATEK program) [214235]
- Norwegian Micro- and Nano-Fabrication Facility, NorFab [197411/V30]
- MSIP (Ministry of Science, ICT and Future Planning), Korea, under the ITRC (Information Technology Research Center) support program [IITP-2016-R0992-16-1017]
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Due to bandgap tunability, GaAsSb nanowires (NWs) have received a great deal of attention for a variety of optoelectronic device applications. However, electrical and optical properties of GaAsSb are strongly affected by Sb-related defects and scattering from surface states and/or defects, which can limit the performance of GaAsSb NW devices. Thus, in order to utilize the GaAsSb NWs for high performance electronic and optoelectronic devices, it is required to study the material and interface properties (e.g. the interface trap density) in the GaAsSb NW devices. Here, we investigate the low frequency noise in single GaAsSb NWs with self-induced compositional gradients. The current noise spectral density of the GaAsSb NW device showed a typical 1/f noise behavior. The Hooge's noise parameter and the interface trap density of the GaAsSb NW device were found to be similar to 2.2 x 10(-2) and similar to 2 x 10(12) eV(-1) cm(-2), respectively. By applying low frequency noise measurements, the noise equivalent power, a key figure of merit of photodetectors, was calculated. The observed low frequency noise properties can be useful as guidance for quality and reliability of GaAsSb NW based electronic devices, especially for photodetectors.
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