Journal
NANOTECHNOLOGY
Volume 27, Issue 45, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/45/455706
Keywords
cathodoluminescence; nanowires; GaN; luminescence quenching; carbon contamination; exciton lifetime
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Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trapping at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area. Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics.
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