Journal
NANOTECHNOLOGY
Volume 27, Issue 34, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/34/34LT01
Keywords
SnS2; nanosheets; high on/off ratio; field effect transistors
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2D layered SnS2 nanosheets have attracted increasing research interest due to their highly anisotropic structural, electrical, optical, and mechanical properties. Here, through mechanical exfoliation, few-layer SnS2 was obtained from as-synthesized many-layered bulk SnS2. Micro-characterization and Raman study demonstrate the hexagonal symmetry structure of the nanosheets so fabricated. The energy band structures of both SnS2 bulk and monolayer were investigated comparatively. A highly photosensitive field effect transistor based on the obtained few-layer SnS2 nanosheets was fabricated, which shows a high I-photo/I-dark ratio of 10(3), and keeps the responsivity and external quantum efficiency (EQE) at a realistic level of 8.5 AW(-1) and 1.2 x 10(3)% respectively. This 2D structured high on/off ratio photosensitive field effect device may find promising potential applications in functional electronic/optoelectronic devices or systems.
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