Journal
NANOTECHNOLOGY
Volume 27, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/11/115204
Keywords
ZnO nanorods; heterojunction; resistance switching; color tunable electroluminescence
Funding
- Singapore National Research Foundation (NRF) under CRP Award [NRF-CRP-6-2010-2]
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Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaOx is employed as the intermediate layer and an n-ZnO-TaOx-p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaOx layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.
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