Cu2O Heterojunction Solar Cell with Photovoltaic Properties Enhanced by a Ti Buffer Layer

In this study, semiconductor oxide cuprite (Cu2O) and indium tin oxide (ITO) heterojunction solar cells with and without a 10 nm thick titanium (Ti) thin film as the buffer layer were fabricated and characterized for comparison. The Cu2O film was formed by low-cost electrodeposition, and Ti and ITO layers were deposited on a glass substrate by sputtering. The interfacial microstructures, surface topology, and electrical and photovoltaic properties of both solar cells were investigated. The test results showed that the Ti buffer layer changed the surface morphology, resistivity, and contact potential of the electrodeposited Cu2O film. With these changes, the photovoltaic performances of the Cu2O/Ti/ITO solar cell including open-circuit voltage (V-OC) and short-circuit current (I-SC) were all enhanced compared to the Cu2O/ITO solar cell, and the power conversion efficiency was improved from 1.78% to 2.54%. This study offers a promising method to improve the efficiency of Cu2O-based solar cells for sustainability in material resource, environment and eco-system, and energy production.

Automated summary

In this study, semiconductor oxide cuprite (Cu2O) and indium tin oxide (ITO) heterojunction solar cells were fabricated and characterized. The introduction of a titanium (Ti) thin film buffer layer improved the surface morphology, resistivity, and contact potential of the Cu2O film. The Cu2O/Ti/ITO solar cell exhibited enhanced photovoltaic performance and increased power conversion efficiency compared to the Cu2O/ITO solar cell.