4.8 Article

Pathway to high performance, low temperature thin-film solid oxide cells grown on porous anodised aluminium oxide

Journal

NANO ENERGY
Volume 119, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.nanoen.2023.109049

Keywords

Vertically aligned nanocomposite film; Solid oxide cell; Oxygen vacancy; High-performance; Pulsed laser deposition

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Reversible solid oxide cells (rSOCs) offer a promising solution to efficient energy conversion, but have been limited in portable power and electrolysis applications due to excessive polarisation resistance of the oxygen electrode at low temperatures. This study demonstrates the growth of symmetric and complete rSOC structures with reduced polarisation resistance by tuning oxygen vacancy through annealing, providing a promising route towards high-performance rSOC devices for portable power applications.
Reversible solid oxide cells (rSOCs) present a promising solution to future energy challenges through the efficient conversion between electrical and chemical energy. To date, the benefits of rSOC technology have been off-limits to portable power and electrolysis applications due to the excessive polarisation resistance of the oxygen electrode at low temperatures, characterised by high area specific resistance (ASR) values below 500 degrees C. In this work we demonstrate growth of symmetric and complete rSOC structures based on state-of-the-art vertically aligned nanocomposite (VAN) films grown by pulsed laser deposition (PLD) on porous Pt-coated anodised aluminium oxide (AAO) substrates. The symmetric rSOC structures give the first demonstration of an rSOC oxygen electrode with ASR below 0.1 ohm cm2 at temperatures less than 450 degrees C. This is achieved through oxygen vacancy tuning by annealing, as confirmed by Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA) and Rutherford Backscattering Spectrometry (RBS) measurements. Thus, the present work describes a promising route towards future high-performance rSOC devices for portable power applications.

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