Related references
Note: Only part of the references are listed.Rational design of oxide heterostructure InGaZnO/TiO2 for high-performance thin-film transistors
Ablat Abliz et al.
APPLIED SURFACE SCIENCE (2023)
An InGaZnO Charge-Trapping Nonvolatile Memory With the Same Structure of a Thin-Film Transistor
C. Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2022)
Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics
Hyun-Woong Choi et al.
SCIENTIFIC REPORTS (2022)
Defect Engineering for High Performance and Extremely Reliable a-IGZO Thin-Film Transistor in QD-OLED
Young-Gil Park et al.
ADVANCED ELECTRONIC MATERIALS (2022)
Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing
Yuseong Jang et al.
ACS APPLIED ELECTRONIC MATERIALS (2022)
Ultralow contact resistance between semimetal and monolayer semiconductors
Pin-Chun Shen et al.
NATURE (2021)
Hydrogenation of Mg-Doped InGaZnO Thin-Film Transistors for Enhanced Electrical Performance and Stability
Ablat Abliz
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Bilayer indium gallium zinc oxide electrolyte-gated field-effect transistor for biosensor platform with high reliability
Hyun Woo Son et al.
SENSORS AND ACTUATORS B-CHEMICAL (2020)
The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors
Xiaobin Zhou et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
Mengwei Si et al.
ACS NANO (2020)
Design of threshold voltage insensitive pixel driver circuitry using a-IGZO TFT for AMOLED displays
Aditya Sodhani et al.
MICROELECTRONICS JOURNAL (2020)
Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor
Cong Peng et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Hot Carrier Effect in Self-Aligned In-Ga-Zn-O Thin-Film Transistors With Short Channel Length
Nuri On et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Realization of a Self-Powered InGaZnO MSM UV Photodetector Using Localized Surface Fluorine Plasma Treatment
Chun-Ying Huang et al.
ACS APPLIED ELECTRONIC MATERIALS (2020)
Study of a platinum nanoparticle (Pt NP)/amorphous In-Ga-Zn-O (A-IGZO) thin-film-based ammonia gas sensor
Po-Lin Chen et al.
SENSORS AND ACTUATORS B-CHEMICAL (2020)
Amorphous IGZO field effect transistor based flexible chemical and biosensors for label free detection
Deepa Bhatt et al.
FLEXIBLE AND PRINTED ELECTRONICS (2020)
Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer
Min Hoe Cho et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Visible-blind wide-dynamic-range fast-response self-powered ultraviolet photodetector based on CuI/In-Ga-Zn-O heterojunction
Naoomi Yamada et al.
APPLIED MATERIALS TODAY (2019)
Improved electrical performance of a sol-gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing
Esther Lee et al.
NANO CONVERGENCE (2019)
Environment-Adaptable Artificial Visual Perception Behaviors Using a Light-Adjustable Optoelectronic Neuromorphic Device Array
Sung Min Kwon et al.
ADVANCED MATERIALS (2019)
Improved Detectivity of Flexible a-InGaZnO UV Photodetector via Surface Fluorine Plasma Treatment
Y. Y. Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Solution-Processed Yttrium-Doped IZTO Semiconductors for High-Stability Thin Film Transistor Applications
Yongpeng Zhang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs
Abidur Rahaman et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors
Rihui Yao et al.
APPLIED PHYSICS LETTERS (2018)
Light Stimulated IGZO-Based Electric-Double-Layer Transistors For Photoelectric Neuromorphic Devices
Yi Yang et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
Ablat Abliz et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
A High-Reliability Carry-Free Gate Driver for Flexible Displays Using a-IGZO TFTs
Jong-Seok Kim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment
Rihui Yao et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer
Yeo-Myeong Kim et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Dynamic Logic Circuits Using a-IGZO TFTs
Jong-Seok Kim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
High Resolution a-IGZO TFT Pixel Circuit for Compensating Threshold Voltage Shifts and OLED Degradations
Daejung Kim et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2017)
Analysis of the contact resistance in amorphous InGaZnO thin film transistors
Wei Wang et al.
APPLIED PHYSICS LETTERS (2015)
Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor
In-Kyu Lee et al.
ACS APPLIED MATERIALS & INTERFACES (2014)
High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure
Xiuling Li et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure
X. F. Chen et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2014)
High performance, transparent a-IGZO TFTs on a flexible thin glass substrate
Gwang Jun Lee et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
In-Ga-Zn-Oxide Semiconductor and Its Transistor Characteristics
Shunpei Yamazaki et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2014)
Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors
Haifeng Pu et al.
APPLIED SURFACE SCIENCE (2013)
Compensating Pixel Circuit Driving AMOLED Display With a-IGZO TFTs
Chih-Lung Lin et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies
Mark T. Greiner et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Full-Swing a-IGZO Inverter With a Depletion Load Using Negative Bias Instability Under Light Illumination
In-Tak Cho et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Amorphous InGaZnO4 films: Gas sensor response and stability
Dae Jin Yang et al.
SENSORS AND ACTUATORS B-CHEMICAL (2012)
Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors
Hsiao-Wen Zan et al.
APPLIED PHYSICS LETTERS (2011)
A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load
Man Ju Seok et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Crystalline In-Ga-Zn-O Density of States and Energy Band Structure Calculation Using Density Function Theory
Charlene Chen et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2011)
Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
Sooyeon Hwang et al.
THIN SOLID FILMS (2011)
Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
Sunho Jeong et al.
ADVANCED MATERIALS (2010)
Influence of oxygen vacancies on Schottky contacts to ZnO
M. W. Allen et al.
APPLIED PHYSICS LETTERS (2008)
Amorphous oxide semiconductors for high-performance flexible thin-film transistors
Kenji Nomura et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
Share Paper
