A Simulation of Thermal Management Using a Diamond Substrate with Nanostructures

In recent years, the rapid progress in the field of GaN-based power devices has led to a smaller chip size and increased power usage. However, this has given rise to increasing heat aggregation, which affects the reliability and stability of these devices. To address this issue, diamond substrates with nanostructures were designed and investigated in this paper. The simulation results confirmed the enhanced performance of the device with diamond nanostructures, and the fabrication of a diamond substrate with nanostructures is demonstrated herein. The diamond substrate with square nanopillars 2000 nm in height exhibited optimal heat dissipation performance. Nanostructures can effectively decrease heat accumulation, resulting in a reduction in temperature from 121 degrees C to 114 degrees C. Overall, the simulation and experimental results in this work may provide guidelines and help in the development of the advanced thermal management of GaN devices using diamond micro/nanostructured substrates.

Automated summary

This paper investigates diamond substrates with nanostructures to address the issue of heat aggregation in GaN-based power devices. Simulation results confirm the enhanced performance of the device with diamond nanostructures, and the fabrication of such a diamond substrate is demonstrated. The diamond substrate with square nanopillars 2000 nm in height exhibits optimal heat dissipation performance, reducing the temperature from 121 degrees C to 114 degrees C.