High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors

In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (similar to 28 nm thick)based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of R-lambda similar to 206 AW(-1) under 1.5 mu W cm(-2) illumination at lambda = 633 nm, V-g = 0 V, and V-ds = 10 V. The obtained R-lambda similar to 206 A W-1 is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the layered-materials realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach R-lambda similar to 655 A W-1 operated at V-g = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE similar to 4.0 x 10(4)%) and specific detectivity (D* similar to 2.35 x 10(13) Jones). The measured D* is comparable to those of the advanced commercial Si-and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications.