Journal
NANOSCALE
Volume 8, Issue 8, Pages 4588-4598Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6nr00015k
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Funding
- Natural Science Foundation of China [91123034, 61102046]
- Chinese Academy of Science [XDA09020201]
- National Science and Technology Ministry [2012BAF13B05-402]
- Chinese Academy of Sciences [KJCX2-EW-M02]
- Basic Research Programme of Jiangsu Province [BK2011364]
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Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (+/- 2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V-1 s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 V-dd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.
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