Related references
Note: Only part of the references are listed.Surface Defects on Natural MoS2
Rafik Addou et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
Junjie Wang et al.
APPLIED PHYSICS LETTERS (2015)
Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
Yao Guo et al.
APPLIED PHYSICS LETTERS (2015)
Exploring atomic defects in molybdenum disulphide monolayers
Jinhua Hong et al.
NATURE COMMUNICATIONS (2015)
Tunable Charge-Trap Memory Based on Few-Layer MoS2
Enze Zhang et al.
ACS NANO (2015)
In Situ TEM Characterization of Shear-Stress-Induced Interlayer Sliding in the Cross Section View of Molybdenum Disulfide
Juan Pablo Oviedo et al.
ACS NANO (2015)
Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors
Mikai Chen et al.
ACS NANO (2014)
A Universal Method for Preparation of Noble Metal Nanoparticle-Decorated Transition Metal Dichalcogenide Nanobelts
Xun Hong et al.
ADVANCED MATERIALS (2014)
Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
Tao Li et al.
APPLIED PHYSICS LETTERS (2014)
Bandgap, Mid-Gap States, and Gating Effects in MoS2
Chih-Pin Lu et al.
NANO LETTERS (2014)
Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors
Kyungjune Cho et al.
NANOTECHNOLOGY (2014)
The valley Hall effect in MoS2 transistors
K. F. Mak et al.
SCIENCE (2014)
Electrically Switchable Chiral Light-Emitting Transistor
Y. J. Zhang et al.
SCIENCE (2014)
Pulsed I-V measurement method to obtain hysteresis-free characteristics of graphene FETs
Jun-Mo Park et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
Rui Cheng et al.
NATURE COMMUNICATIONS (2014)
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Zhihao Yu et al.
NATURE COMMUNICATIONS (2014)
High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
Hsiao-Yu Chang et al.
ACS NANO (2013)
Electrically Driven Tuning of the Dielectric Constant in MoS2 Layers
Elton J. G. Santos et al.
ACS NANO (2013)
Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors
Kyungjune Cho et al.
ACS NANO (2013)
Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
Simone Bertolazzi et al.
ACS NANO (2013)
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
Gwan-Hyoung Lee et al.
ACS NANO (2013)
Metal dichalcogenide nanosheets: preparation, properties and applications
Xiao Huang et al.
CHEMICAL SOCIETY REVIEWS (2013)
Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors
Woanseo Park et al.
NANOTECHNOLOGY (2013)
Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
Woo Jong Yu et al.
NATURE NANOTECHNOLOGY (2013)
Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices
Kallol Roy et al.
NATURE NANOTECHNOLOGY (2013)
Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
Sanfeng Wu et al.
NATURE PHYSICS (2013)
Single-Layer MoS2 Phototransistors
Zongyou Yin et al.
ACS NANO (2012)
Hysteresis in Single-Layer MoS2 Field Effect Transistors
Dattatray J. Late et al.
ACS NANO (2012)
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
Hao Qiu et al.
APPLIED PHYSICS LETTERS (2012)
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
Jiang Pu et al.
NANO LETTERS (2012)
Valley polarization in MoS2 monolayers by optical pumping
Hualing Zeng et al.
NATURE NANOTECHNOLOGY (2012)
Spin and valley quantum Hall ferromagnetism in graphene
A. F. Young et al.
NATURE PHYSICS (2012)
Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes
Juqing Liu et al.
SMALL (2012)
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
Sunkook Kim et al.
NATURE COMMUNICATIONS (2012)
Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Subhamoy Ghatak et al.
ACS NANO (2011)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)