Journal
NANOSCALE
Volume 8, Issue 11, Pages 6043-6056Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr07938a
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Funding
- National Natural Science Foundation of China [21471111, 61475110, 61404089, 61504090]
- Basic Research Projects of Shanxi Province [2015011034, 2014011016-6, 2014021019-1, 015021103]
- Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201406]
- Shanxi Provincial Key Innovative Research Team in Science and Technology [2015013002-10]
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InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0 degrees, 2 degrees and 15 degrees towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0 degrees, 2 degrees and 15 degrees misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0 degrees case. An extra emission was observed from the 2 degrees and 15 degrees off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0 degrees surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.
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