Journal
NANOSCALE
Volume 8, Issue 17, Pages 9107-9112Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6nr02078j
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Funding
- Center for Advanced Soft Electronics (CASE) under Global Frontier Research Program [NRF-2013M3A6A5073177]
- Basic Science Research Program through National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning, Korea [2013R1A1A2011897]
- National Research Foundation of Korea [2013R1A1A2011897] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (10(4) s), and cyclic endurance (1000 cycles).
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