Journal
NANO RESEARCH
Volume 9, Issue 1, Pages 72-93Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-016-1003-3
Keywords
two-dimensional layered materials; silicon; heterojunctions; solar cells; photodetectors
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Funding
- National Basic Research Program of China [2012CB932400, 2013CB933500]
- National Natural Science Foundation of China [91233110, 91333208, 61422403]
- Natural Science Foundation of Jiangsu Province [BK20140332]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- QinLan Project
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As one of the most important semiconductor materials, silicon (Si) has been widely used in current energy and optoelectronic devices, such as solar cells and photodetectors. However, the traditional Si p-n junction solar cells need complicated fabrication processes, leading to the high cost of Si photovoltaic devices. The wide applications of Si-based photodetectors are also hampered by their low sensitivity to ultraviolet and infrared light. Recently, two-dimensional (2D) layered materials have emerged as a new material system with tremendous potential for future energy and optoelectronic applications. The combination of Si with 2D layered materials represents an innovative approach to construct high-performance optoelectronic devices by harnessing the complementary advantages of both materials. In this review, we summarize the recent advances in 2D layered material/Si heterojunctions and their applications in photovoltaic and optoelectronic devices. Finally, the outlook and challenges of 2D layered material/Si heterojunctions for high-performance device applications are presented.
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