Journal
NANO RESEARCH
Volume 10, Issue 2, Pages 355-363Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-016-1297-1
Keywords
large single-crystalline graphene; fast growth; isotope labelling; carbon source
Categories
Funding
- National Basic Research Program of China [2013CB932603, 2012CB933404, 2014CB932500]
- National Natural Science Foundation of China [51432002, 51520105003, 21525310]
- National Program for Support of Top-Notch Young Professionals
- Beijing Municipal Science AMP
- Technology Commission [Z161100002116002]
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The fast growth of large single-crystalline graphene by chemical vapor deposition on Cu foil remains a challenge for industrial-scale applications. To achieve the fast growth of large single-crystalline graphene, understanding the detailed dynamics governing the entire growth process-including nucleation, growth, and coalescence-is important; however, these remain unexplored. In this study, by using a pulsed carbon isotope labeling technique in conjunction with micro-Raman spectroscopy identification, we visualized the growth dynamics, such as nucleation, growth, and coalescence, during the fast growth of large single-crystalline graphene domains. By tuning the supply of the carbon source, a growth rate of 320 mu m/min and the growth of centimeter-sized graphene single crystals were achieved on Cu foil.
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