Journal
NANO LETTERS
Volume 16, Issue 4, Pages 2139-2144Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b02951
Keywords
Resistive memory; strong metal support interaction; electroforming in situ TEM; oxygen vacancy; filament; TiO2
Categories
Funding
- NSF [DMR-1002164, 1210503, 1505127]
- LRSM, NSF MRSEC [DMR-1120901]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1505127] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1210503] Funding Source: National Science Foundation
Ask authors/readers for more resources
Oxygen vacancy formation, migration, and subsequent agglomeration into conductive filaments in transition metal oxides under applied electric field is widely believed to be responsible for electroforming in resistive memory devices, although direct evidence of such a pathway is lacking. Here, by utilizing strong metal support interaction (SMSI) between Pt and TiO2, we observe via transmission electron microscopy the electroforming event in lateral Pt/TiO2/Pt devices where the atomic Pt from the electrode itself acts as a tracer for the propagating oxygen vacancy front. SMSI, which originates from the d-orbital overlap between Pt atom and the reduced cation of the insulating oxide in the vicinity of oxygen vacancies, was optimized by fabricating nanoscale devices causing Pt atom migration tracking the moving oxygen vacancy front from the anode to cathode during electroforming. Experiments performed in different oxidizing and reducing conditions, which tune SMSI in the Pt-TiO2 system, further confirmed the role of oxygen vacancies during electroforming. These observations also demonstrate that the noble metal electrode may not be as inert as previously assumed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available