Journal
NANO LETTERS
Volume 16, Issue 12, Pages 7768-7773Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03951
Keywords
Black phosphorus; quantum Hall effect; mobility; g-factor; Landau level coincidence; spin-selective transport
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Funding
- Research Grants Council of Hong Kong [16302215, HKU9/CRF/13G, 604112, N_HKUST613/12]
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We demonstrate that a field-effect transistor (FET) made of few-layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum exhibits a room-temperature hole mobility of 5200 cm(2)/(Vs), being limited just by the phonon scattering. At cryogenic temperatures, the FET mobility increases up to 45 000 cm(2)/(Vs), which is five times higher compared to the mobility obtained in earlier reports. The unprecedentedly clean h-BN-BP-h-BN heterostructure exhibits Shubnikov-de Haas oscillations and a quantum Hall effect with Landau level (LL) filling factors down to v = 2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass of m* = 0.26 m(0) is measured, and a Lande g-factor of g = 2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up- and down-spin orientations is found.
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