4.8 Article

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

Journal

NANO LETTERS
Volume 17, Issue 1, Pages 78-84

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03362

Keywords

Black phosphorus; tunable optical properties; mid-infrared; Burstein-Moss shift; quantum-confined Franz-Keldysh effect; optical modulator

Funding

  1. U.S. Department of Energy (DOE) Office of Science [DE-FG02-07ER46405]
  2. Office of Science, Office of Basic Energy Sciences, of the U.S. DOE [DE-AC02-05CH11231]
  3. Resnick Institute
  4. National Defense Science and Engineering Graduate Fellowship
  5. Office of Science of the U.S. DOE [DE-AC02-05CH11231]
  6. Division Of Earth Sciences
  7. Directorate For Geosciences [1322082] Funding Source: National Science Foundation

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We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and-a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

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