Journal
NANO LETTERS
Volume 16, Issue 3, Pages 1858-1862Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b04936
Keywords
Graphene; h-BN; monolayer MoS2; metal-insulator-semiconductor diode; carrier tunneling
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Funding
- Human Resources Development program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) [20124010203270]
- Ministry of Trade, Industry, and Energy of the Korean government
- FUI MULTISS project [F1305008 M]
- [IBS-R011-D1]
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We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nano electronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.
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