Journal
NANO LETTERS
Volume 16, Issue 5, Pages 3360-3366Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b01051
Keywords
Hexagonal boron nitride; chemical vapor deposition; ammonia borane; sapphire substrate
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Funding
- NRF [NRF-2014R1A2A2A01007136]
- Center for Advanced Soft Electronics under the Global Frontier Research Program through the National Research Foundation - Ministry of Science, ICT, and Future Planning, Korea [2011-0031630]
- Royal Society
- ERC
- EU FP7 Graphene Flagship Project [604391]
- [IBS-R019-D1]
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Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.
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