Journal
NANO LETTERS
Volume 16, Issue 5, Pages 3221-3229Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00689
Keywords
Two-dimensional materials; indium selenide; microphotoluminescence; optical properties; band gap engineering; nanotexturing
Categories
Funding
- Spanish Government [TEC2014-53727-C2-1-R, MAT2014-53500-R, FIS2015-64886-05-3-P, FIS2015-64886-05-4-P]
- Comunidad Valenciana Government [PROMETEOII/2014/059]
- Generalitat de Catalunya Government [2014SGR301]
- National Science Foundation [DMR-1306601]
- Mobility Program of VLC-CAMPUS
- Spanish MINECO through the Severo Ochoa Centers of Excellence Program [SEV-2015-0496, SEV-2013-0295]
- CONACYT
- program Atraccio de Talent, VLC-CAMPUS of the University of Valencia [UVINV-PREDOC13-110538]
- [CPI-15-276]
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Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.
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