Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

Photocathodes based on GaAs and other III-V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry-Perot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.

Automated summary

Photocathodes based on GaAs and other III-V semiconductors are capable of producing highly spin-polarized electron beams. A GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath was fabricated to increase the quantum efficiency (QE). The configuration of a Fabry-Perot cavity between the DBR and GaAs surface enhances the absorption of incident light, resulting in a higher QE. These photocathode structures achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.