Journal
NANO LETTERS
Volume 16, Issue 11, Pages 6724-6732Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b01781
Keywords
Low current; low power; self-rectifying; forming-free; memristor
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Funding
- Global Research Laboratory Program of the Ministry of Science, ICT, and Future Planning [2012040157]
- National Research Foundation of Korea (NRF) of Republic of Korea [NRF-2014R1A2AIA10052979]
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A Pt/NbOx/TiOy/NbOx/TiN stack integrated on a 30 nm contact via shows a programming current as low as 10 nA and 1 pA for the set and reset switching, respectively, and a self-rectifying ratio as high as similar to 10(5), which are suitable characteristics for low-power memristor applications. It also shows a forming-free characteristic. A charge-trap-associated switching model is proposed to account for this self-rectifying memrisive behavior. In addition, an asymmetric voltage scheme (AVS) to decrease the write power consumption by utilizing this self-rectifying memristor is also described. When the device is used in a 1000 x 1000 crossbar array with the AVS, the programming power can be decreased to 8.0% of the power consumption of a conventional biasing scheme. If the AVS is combined with a nonlinear selector, a power consumption reduction to 0.31% of the reference value is possible.
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