Journal
NANO LETTERS
Volume 16, Issue 6, Pages 3788-3794Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b01186
Keywords
Atomically thin layers; Schottky junction; semiconductor-metal transition; electron-beam irradiation; IT phase
Categories
Funding
- MEXT
- AOARD grant in U.S. Air Force Office of Scientific Research [135049]
- Special Coordination Funds for Promoting Science and Technology
- Severo Ochoa Program (MINECO) [SEV-2013-0295]
- European Union [604391]
- [24241046]
- [15K13277]
- Grants-in-Aid for Scientific Research [25247051, 15K13277, 26103003] Funding Source: KAKEN
- ICREA Funding Source: Custom
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Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.
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