Journal
NANO LETTERS
Volume 16, Issue 9, Pages 5836-5841Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b02615
Keywords
Strain engineering; MoS2; photoluminescence; bandgap; Raman spectroscopy; biaxial strain
Categories
Funding
- National Science Foundation (NSF) [1054406, 1411008]
- NSF [DGE-1247312]
- Department of Defense (DoD) Air Force Office of Scientific Research [32 CFR 168a]
- Boston University Undergraduate Research Opportunities Program (UROP)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1411008] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1464616, 1054406] Funding Source: National Science Foundation
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We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that are highly impermeable to gas, we are able to apply a pressure difference across suspended membranes to induce biaxial strains. We observe the effect of strain on the energy and intensity Of the peaks in the photoluminescence (PL) spectrum and find a linear tuning rate of the optical band gap of 99 meV/%. This method is then used to study the PL spectra of bilayer and trilayer devices under strain and to find the shift rates and Gruneisen parameters of two Raman modes in monolayer MoS2. Finally, we use this result to show that we can apply biaxial strains as large as 5.6% across micron-sized areas and report evidence for the strain tuning of higher level optical transitions.
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