Journal
NANO LETTERS
Volume 16, Issue 12, Pages 7521-7529Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03316
Keywords
Germanium-tin; core-shell nanowire; photoluminescence; optoelectronics
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Funding
- National Science Foundation Division of Materials Research [DMR-1206511, DMR-1608977]
- National Science Foundation
- Natural Sciences and Engineering Research Council of Canada
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Germanium-tin alloy nanowires hold promise as silicon compatible optoelectronic elements with the potential to achieve a direct band gap transition required for efficient light emission. In contrast to Ge1-xSnx epitaxial thin films, free-standing nanowires deposited on misfitting germanium or silicon substrates can avoid compressive, elastic strains that inhibit formation of a direct gap. We demonstrate strong room temperature photoluminescence, consistent with band edge emission from both Ge core nanowires, elastically strained in tension, and the almost unstrained Ge1-xSnx shells grown around them. Low-temperature chemical vapor deposition of these core-shell structures was achieved using standard precursors, resulting in Sn incorporation that significantly exceeds the bulk solubility limit in germanium.
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