Journal
NANO LETTERS
Volume 16, Issue 7, Pages 4094-4101Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00803
Keywords
Large and controllable chemical potential difference; graphene p-n junction; high-efficiency photodetection; alternately nitrogen- and boron-doped graphene
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Funding
- National Basic Research Program of China [2012CB933404, 2013CB932603, 2014CB932500]
- National Natural Science Foundation of China [51432002, 51520105003, 21222303, 51121091, 51362029]
- National Program for Support of Top-Notch Young Professionals
- Beijing Municipal Science AMP
- Technology Commission [Z151100003315013, Z131100003213016, Z141103004414103]
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Being atomically thin, graphene-based p-n junctions hold great promise for applications in ultrasmall high efficiency photodetectors. It is well-known that the efficiency of such photodetectors can be improved by optimizing the chemical potential difference of the graphene p-n junction. However, to date, such tuning has been limited to a few hundred millielectronvolts. To improve this critical parameter, here we report that using a temperature-controlled chemical vapor deposition process, we successfully achieved modulation-doped growth of an alternately nitrogen- and boron-doped graphene p-n junction with a tunable chemical potential difference up to 1 eV. Furthermore, such p-n junction structure can be prepared on a large scale with stable, uniform, and substitutional doping and exhibits a single-crystalline nature. This work provides a feasible method for synthesizing low-cost, large-scale, high efficiency graphene p-n junctions, thus facilitating their applications in optoelectronic and energy conversion devices.
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