Journal
NANO LETTERS
Volume 16, Issue 4, Pages 2322-2327Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b05009
Keywords
Heterojunction; 2d materials; Coulomb interaction; substrate; nonlocal manipulation
Categories
Funding
- European Graphene Flagship
- DFG [SPP 1459]
Ask authors/readers for more resources
We propose to create lateral heterojunctions in two-dimensional materials based on nonlocal manipulations of the Coulomb interaction using structured dielectric environments. By means of ab initio calculations for MoS2 as well as generic semiconductor models, we show that the Coulomb interaction-induced self-energy corrections in real space are sufficiently nonlocal to be manipulated externally, but still local enough to induce spatially sharp interfaces within a single homogeneous monolayer to form heterojunctions. We find a type-II heterojunction band scheme promoted by a laterally structured dielectric' environment, which exhibits a sharp band gap crossover within less than 5 unit cells.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available