Journal
NANO LETTERS
Volume 16, Issue 4, Pages 2586-2594Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00154
Keywords
2D heterostructures; tunneling transistor; linear-scaling DFT; electric fields
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Funding
- Winton Programme for the Physics of Sustainability
- Cambridge Trust European Scholarship
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Black phosphorus (BP) has recently emerged as a promising semiconducting two-dimensional material. However, its viability is threatened by its instability in ambient conditions and by the significant decrease of its band gap in multilayers. We show that one could solve all the aforementioned problems by interfacing BP with hexagonal boron nitride (hBN). To this end, we simulate large, rotated hBN/BP interfaces using linear-scaling density functional theory. We predict that hBN-encapsulation preserves the main electronic properties of the BP monolayer, while hBN spacers can be used to counteract the band gap reduction in stacked BP. Finally, we propose a model for a tunneling field effect transistor (TFET) based on hBN-spaced BP bilayers. Such BP TFETs would sustain both low-power and fast-switching operations, including negative differential resistance behavior with peak-to-valley ratios of the same order of magnitude as those encountered in transition metal dichalcogenide TFETs.
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