4.7 Article

The understanding of the impact of efficiently optimized underlap length on analog/RF performance parameters of GNR-FETs

Related references

Note: Only part of the references are listed.
Article Chemistry, Multidisciplinary

Improved performance of sub-10-nm band-to-band tunneling n-i-n graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study

Khalil Tamersit et al.

Summary: This study investigated the effects of underlapping on sub-10-nm band-to-band tunneling graphene nanoribbon field-effect transistors. Quantum simulation studies showed that underlapping improved device performance and scaling capacity. Despite a slight decrease in on-current, the underlap configuration resulted in improved subthreshold swing, reduced leakage current, and higher current ratios, making the devices potentially suitable for ultralow power applications.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2022)

Article Materials Science, Multidisciplinary

A Ballistic Transport Nanodevice Based on Graphene Nanoribbon FET by Enhanced Productivity for Both Low-Voltage and Radio-Frequency Scopes

Mohammad K. Anvarifard et al.

Summary: This study focuses on evaluating the low-voltage and radio frequency (RF) performance of a nanodevice made from a graphene nanoribbon. Two different material engineering options were used, and key parameters were analyzed to validate the performance. Additionally, the performance of other devices was compared, and non-linearity and RF intermodulation distortion were analyzed.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2022)

Article Physics, Applied

Multiscale Pseudoatomistic Quantum Transport Modeling for van der Waals Heterostructures

Giuseppe Lovarelli et al.

Summary: This article proposes a computationally effective and physically sound method for modeling electron transport in 2D van der Waals heterostructures, and applies it to two practical electronic devices.

PHYSICAL REVIEW APPLIED (2022)

Article Engineering, Electrical & Electronic

Performance Projection of 2-D Material-Based CMOS Inverters for Sub-10-nm Channel Length

Akhilesh Rawat et al.

Summary: This study comprehensively investigates the performance of CMOS inverters based on 2-D materials compared to silicon counterparts for sub-10-nm channel lengths. The heterogeneous WSe(2)-MoS(2) inverter configuration shows excellent switching characteristics and larger static noise margin for 5.6 nm and beyond channel length.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Engineering, Electrical & Electronic

Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

Khalil Tamersit

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS (2020)

Article Physics, Condensed Matter

III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications

Manas Ranjan Tripathy et al.

SUPERLATTICES AND MICROSTRUCTURES (2020)

Article Physics, Condensed Matter

Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

Zeinab Ramezani et al.

SUPERLATTICES AND MICROSTRUCTURES (2018)

Article Engineering, Electrical & Electronic

Material-Device-Circuit Co-Design of 2-D Materials-Based Lateral Tunnel FETs

Tarun Agarwal et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)

Article Engineering, Electrical & Electronic

Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications

Pravin N. Kondekar et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)

Article Engineering, Electrical & Electronic

Performance Evaluation of Bilayer Graphene Nanoribbon Tunnel FETs for Digital and Analog Applications

Brajesh Rawat et al.

IEEE TRANSACTIONS ON NANOTECHNOLOGY (2017)

Article Physics, Condensed Matter

Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect

Atefeh Nazari et al.

SUPERLATTICES AND MICROSTRUCTURES (2016)

Article Chemistry, Multidisciplinary

Electrically Configurable Graphene Field-Effect Transistors with a Graded-Potential Gate

Xiaowei Wang et al.

NANO LETTERS (2015)

Article Nanoscience & Nanotechnology

A novel graphene nanoribbon field effect transistor with two different gate insulators

Maedeh Akbari Eshkalak et al.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2015)

Article Engineering, Electrical & Electronic

Performance Evaluation and Reliability Issues of Junctionless CSG MOSFET for RFIC Design

Yogesh Pratap et al.

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2014)

Article Nanoscience & Nanotechnology

The performance measure of GS-DG MOSFET: an impact of metal gate work function

S. K. Mohapatra et al.

ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY (2014)

Article Nanoscience & Nanotechnology

Effects of vacancy defects on graphene nanoribbon field effect transistor

Sheng Chang et al.

MICRO & NANO LETTERS (2013)

Article Physics, Condensed Matter

Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

Mehdi Saremi et al.

SUPERLATTICES AND MICROSTRUCTURES (2013)

Article Engineering, Electrical & Electronic

Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions

Kalyan Koley et al.

MICROELECTRONICS RELIABILITY (2012)

Article Nanoscience & Nanotechnology

Analysis of the Metal Work Function Dependence of Charge Transfer in Contacted Graphene Nanoribbons Invited Feature Article

Davide Mencarelli et al.

NANOMATERIALS AND NANOTECHNOLOGY (2012)

Article Engineering, Electrical & Electronic

Computational Study of Edge Configuration and Quantum Confinement Effects on Graphene Nanoribbon Transport

Ryutaro Sako et al.

IEEE ELECTRON DEVICE LETTERS (2011)

Article Engineering, Electrical & Electronic

Applications of Graphene Devices in RF Communications

Tomas Palacios et al.

IEEE COMMUNICATIONS MAGAZINE (2010)

Article Physics, Condensed Matter

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

S. Rumyantsev et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2010)

Review Nanoscience & Nanotechnology

Graphene transistors

Frank Schwierz

NATURE NANOTECHNOLOGY (2010)

Article Engineering, Electrical & Electronic

Gate fringe-induced barrier lowering in underlap FinFET structures and its optimization

Angada B. Sachid et al.

IEEE ELECTRON DEVICE LETTERS (2008)

Article Engineering, Electrical & Electronic

Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs

Youngki Yoon et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)

Article Nanoscience & Nanotechnology

Approaching ballistic transport in suspended graphene

Xu Du et al.

NATURE NANOTECHNOLOGY (2008)

Article Engineering, Electrical & Electronic

Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study

Yijian Ouyang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)

Article Engineering, Electrical & Electronic

Simulation of graphene nanoribbon field-effect transistors

Gianluca Fiori et al.

IEEE ELECTRON DEVICE LETTERS (2007)

Article Chemistry, Physical

The rise of graphene

A. K. Geim et al.

NATURE MATERIALS (2007)

Article Physics, Multidisciplinary

Energy gaps in graphene nanoribbons

Young-Woo Son et al.

PHYSICAL REVIEW LETTERS (2006)

Article Multidisciplinary Sciences

Two-dimensional gas of massless Dirac fermions in graphene

KS Novoselov et al.

NATURE (2005)

Article Engineering, Electrical & Electronic

Modeling and optimization of fringe capacitance of nanoscale DGMOS devices

A Bansal et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)

Article Engineering, Electrical & Electronic

Optimization of RF linearity in DG-MOSFETs

S Kaya et al.

IEEE ELECTRON DEVICE LETTERS (2004)

Article Multidisciplinary Sciences

Electric field effect in atomically thin carbon films

KS Novoselov et al.

SCIENCE (2004)

Article Physics, Condensed Matter

Nanoscale device modeling: the Green's function method

S Datta

SUPERLATTICES AND MICROSTRUCTURES (2000)

Article Engineering, Electrical & Electronic

On the performance limits for Si MOSFET's: A theoretical study

F Assad et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2000)