Journal
NANO LETTERS
Volume 16, Issue 7, Pages 4329-4334Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b01393
Keywords
Single-walled carbon nanotubes; n-type; chemical doping; thin-film transistors; top-gate
Categories
Funding
- Office of Naval Research MURI Program [N00014-11-1-0690]
- National Science Foundation [DMR-1305247, DMR-1505849]
- National Science Foundation Graduate Research Fellowship
- National Science Foundation Materials Research Science and Engineering Center [DMR-1121262]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1505849] Funding Source: National Science Foundation
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Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.
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