High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

Perovskite light-emitting diodes (PeLEDs); because of its fundamental scientific importance and practical applications in the fields of low-cost light source or display applications, have drawn worldwide attention in recent years. However, PeLEDs available today suffer from a compromise in their emission efficiency and operation stability. In this study, we designed and fabricated a stacking all-inorganic multilayer structure by using inorganic perovskite CsPbBr3 quantum dots (QDs) as the emissive layer and inorganic n-type MgZnO and p-type MgNiO as the carrier injectors, respectively. Through energy band engineering of carrier injectors by Mg incorporation and their thickness optimization, PeLEDs with maximum luminance of 3809 cd/m(2), luminous efficiency of 2.25 cd/A, and external quantum efficiency of 2.39% have been realized, which are much better than most PeLEDs from CH3NH3PbBr3 films, and comparable with the highest results reported on CsPbBr3 QDs LEDs. More importantly, the unencapsulated PeLEDs in a continuous current mode demonstrate a-remarkable operation stability against water and oxygen degradation. After a continuous operation for 10 h under a dc bias (10.0 V), nearly 80% of the original efficiency of the PeLEDs has: been retained, greatly superior to reference and other previously reported devices constructed with conventional organic carrier injectors. Our results obtained open possibilities for the design and development of high-efficiency and air-stable PeLEDs that are not dependent on expensive and less-stable organic carrier injectors.