Journal
NANO LETTERS
Volume 16, Issue 12, Pages 8015-8020Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b04630
Keywords
Atomic-thick ferroelectrics; first-principles calculations; two-dimensional materials; phosphorene
Categories
Funding
- NSFC [11604146, 11374160, 51522206, 11574151]
- NSF of Jiangsu Province [BK20130031]
- New Century Excellent Talents in University [NCET-12-0628]
- PAPD
- Fundamental Research Funds for the Central Universities [30915011203]
- Shanghai Supercomputer Centre
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Ferroelectrics have many significant applications in electric devices, such as capacitor or random-access memory, tuning the efficiency of solar cell. Although atomic-thick ferroelectrics are the necessary components for high-density electric devices or nanoscale devices, the development of such materials still faces a big challenge because of the limitation of intrinsic mechanism. Here, we reported that in-plane atomic thick ferroelectricity can be induced by vertical electric field in phosphorene nanoribbons (PNRs). Through symmetry arguments, we predicted that ferroelectric direction is perpendicular to the direction of external electric field and lies in the plane. Further confirmed by the comprehensive first-principles calculations, we showed that such ferroelectricity is induced by the electron-polarization, which is different from the structural distortion in traditional ferroelectrics and the recent experimental discovery of in-plane atomic-thick ferroelectrics (Science 2016, 353, 274). Moreover, we found that the value of electronic polarization in bilayer is much larger than that in monolayer. Our results show that electron-polarization ferroelectricity maybe the most promising candidate for atomic-thick ferroelectrics.
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