Journal
NANO LETTERS
Volume 16, Issue 4, Pages 2580-2585Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00144
Keywords
Phosphorene; van der Waals; heterostructure; Schottky barrier; short channel
Categories
Funding
- NSF Materials Research Science and Engineering Center (MRSEC) of Northwestern University [DMR-1121262]
- NSF EFRI 2-DARE program [NSF EFRI-143510]
- Office of Naval Research [N00014-14-1-0669]
- Sungkyunkwan University
- SPIE education scholarship
- IEEE DEIS fellowship
- MRSEC (NSF) [DMR-1121262]
- State of Illinois
- Northwestern University
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1433510] Funding Source: National Science Foundation
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Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semimetallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here a vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure. The resulting device characteristics include high on-state current densities (>1600 A/cm(2)) and current on/off ratios exceeding 800 at low temperature. Two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage. In particular, the Schottky barrier between graphene and BP determines charge transport at high temperatures and positive gate voltages, whereas tunneling dominates at low temperatures and negative gate voltages. These results elucidate out-of-plane electronic transport in BP and thus have implications for the design and operation of BP-based van der Waals heterostructures.
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