Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

We report results of investigation-of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semimetallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It Was found that TaSe3 nano-wires have lower levels of the normalized noise spectral-density, S-I/I-2, compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed, that the low-frequency electronic 1/f noise becomes the 1/f(2) type as temperature increases to similar to 400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals, we determined that the noise activation energy for quasi-ID TaSe3 nanowires is approximately E-P approximate to 1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration is E-A = 0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low frequency 1/f noise in quasi-1D van der Waals semimetals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.