Journal
NANO LETTERS
Volume 16, Issue 5, Pages 3210-3214Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00638
Keywords
Topological Dirac semimetal; thin film growth; scanning tunneling microscopy; magnetotransport
Categories
Funding
- ARC Laureate fellowship [FL120100038]
- ARC DECRA fellowships [DE160101157, DE160101334]
- National Research Foundation of Singapore's fellowship program [NRF-NRFF2012-01]
- Australian Research Council [DE160101334, FL120100038] Funding Source: Australian Research Council
Ask authors/readers for more resources
Topological Dirac semimetals (TDS) are three-dimensional analogues of graphene, with linear electronic dispersions in three dimensions. Nanoscale confinement of TDSs in thin films is a necessary step toward observing the conventional-to-topological quantum phase transition (QPT) with increasing film thickness, gated devices for electric-field control of topological states, and devices with surface-state-dominated transport phenomena. Thin films can also be interfaced with superconductors (realizing a host for Majorana Fermions) or ferromagnets (realizing Weyl Fermions or T-broken topological states). Here we report structural and electrical characterization of large-area epitaxial thin films of TDS Na3Bi on single crystal Al2O3[0001] substrates. Charge carrier mobilities exceeding 6,000 cm(2)/(V s) and carrier densities below 1 x 10(18) cm(-3) are comparable to the best single crystal values. Perpendicular magnetoresistance at low field shows the perfect weak antilocalization behavior expected for Dirac Fermions in the absence of intervalley scattering. At higher fields up to 0.5 T anomalously large quadratic magnetoresistance is observed, indicating that some aspects of the low field magnetotransport (mu B < 1) in this TDS are yet to be explained.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available