Journal
NANO LETTERS
Volume 16, Issue 5, Pages 3314-3320Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00932
Keywords
Stacked van der Waals heterostructures; strain; electronic band structure interaction; photoluminescence; chemical vapor deposition; controlled orientation and stacking order
Categories
Funding
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
- US Army Research Office Electronics Division [67026-EL]
- Research Funds for the Central Universities [NE2015104, NS2014006]
- SKL-MCMS in NUAA [MCMS-0415K01]
- China Scholarship Council
- U.S. Department of Energy, Office of Science, Basic Energy Science, Materials Sciences and Engineering Division
- ORNL's Center for Nanophase Materials Sciences (CNMS), which is a DOE Office of Science User Facility
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Vertically stacked van der Waals heterostructures composed of compositionally different two-dimensional atomic layers give rise to interesting properties due to substantial interactions between the layers. However, these interactions can be easily obscured by the twisting of atomic layers or cross-contamination introduced by transfer processes, rendering their experimental demonstration challenging. Here, we explore the electronic structure and its strain dependence of stacked MoSe2/WSe2 heterostructures directly synthesized by chemical vapor deposition, which unambiguously reveal strong electronic coupling between the atomic layers. The direct and indirect band gaps (1.48 and 1.28 eV) of the heterostructures are measured to be lower than the band gaps of individual MoSe2 (1.50 eV) and WSe2 (1.60 eV) layers. Photoluminescence measurements further show that both the direct and indirect band gaps undergo redshifts with applied tensile strain to the heterostructures, with the change of the indirect gap being particularly more sensitive to strain. This demonstration of strain engineering in van der Waals heterostructures opens a new route toward fabricating flexible electronics.
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